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Investigation Of Gate Leakage Current In Nitrogen-Irradiated Algan/Gan Heterostructures, Rose E. May

Theses and Dissertations

Due to commercial and government interest in devices capable of functioning in high-power, high-frequency space applications, radiation tolerant AlGaN/GaN devices have been under study in recent years. Passivation of the AlGaN surface by (Si₃N₄) prevents electron trapping and enhances the 2DEG, but it also increases gate leakage currents, which can lead to device failure. This study sought information about current leakage mechanisms by introducing displacement damage close to the Si₃N₄/AlGaN interface. The effects of irradiation damage around the Si₃N₄/AlGaN interface on irradiation-induced leakage current were investigated for three …