Physics Commons^™

Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski

Theses and Dissertations

Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10¹³ to 1 x 10¹⁵/cm^-2. Conventional furnace annealing in flowing NH₃ or N₂ gas resulted in good implantation damage recovery at an annealing temperature …