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Electron Transport In Laterally Confined Phosphorus Δ-Layers In Silicon, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, T. -C. Shen
Electron Transport In Laterally Confined Phosphorus Δ-Layers In Silicon, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, T. -C. Shen
T. -C. Shen
Two-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic temperatures. Experimental data fit well with two-dimensional weak localization and interaction theory when the phase coherence length is shorter than the smaller dimension of the confinement. Below a transition temperature the wire conductance saturates.
Ultra-Dense Phosphorous Delta-Layer Grown Into Silicon From Ph3 Molecular Precursors, T. -C. Shen, J. -Y. Ji, M. A. Zudov, R. -R. Du, J. S. Kline, J. R. Tucker
Ultra-Dense Phosphorous Delta-Layer Grown Into Silicon From Ph3 Molecular Precursors, T. -C. Shen, J. -Y. Ji, M. A. Zudov, R. -R. Du, J. S. Kline, J. R. Tucker
T. -C. Shen
Phosphorous δ-doping layers were fabricated in silicon by PH3 deposition at room temperature, followed by low-temperature Si epitaxy.Scanning tunneling microscope images indicate large H coverage, and regions of c(2×2) structure. Hall data imply full carrier activation with mobility<40 cm2/V s when the surface coverage is ≲0.2 ML. Conductivity measurements show a ln(T) behavior at low temperatures, characteristic of a high-density two-dimensional conductor. Possible future applications to atom-scale electronics and quantum computation are briefly discussed.