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Obtaining, Structure And Electrophysical Properties Of The Solid Solution (Gaas1-Δbiδ)1-X-Y(Ge2)X(Znse)Y, Hotamjon Mansurov, Akramjon Boboev, Johongir Usmonov, Xushruybek Mahmudov, Dilkhayotjon Pulatjon Ugli Abdurakhimov
Obtaining, Structure And Electrophysical Properties Of The Solid Solution (Gaas1-Δbiδ)1-X-Y(Ge2)X(Znse)Y, Hotamjon Mansurov, Akramjon Boboev, Johongir Usmonov, Xushruybek Mahmudov, Dilkhayotjon Pulatjon Ugli Abdurakhimov
Scientific Bulletin. Physical and Mathematical Research
This work shows the possibility of growing a single-crystal substitutional solid solution (GaAs1-δBiδ)0.46(Ge2)0.31(ZnSe)0.23on GaP substrates by liquid phase epitaxy from a bismuth-containing melt solution. was shown that tetrahedral bonds in the (GaAs1-δBiδ)0.46(Ge2)0.31(ZnSe)0.23 layers are enriched with arsenide gallium molecules, and some GaAs1-δBiδ molecules are replaced by Ge2 paired atoms and ZnSe molecule compounds. Experimental results showed that in the epitaxial film, the molar content of GaAs …