Physics Commons^™

Electron Beam Effects In Ge–Se Thin Films And Resistance Change Memory Devices, Kasandra Wolf, Hugh Barnaby, Mahesh S. Ailavajhala, Micahel N. Kozicki, Dmitri A. Tenne, Maria Mitkova

Physics Faculty Publications and Presentations

Chalcogenide glasses are the advanced materials of choice for the emerging nanoionic memory devices – conductive bridge random access memory (CBRAM). To understand the nature of the effects occurring in these devices under influence of electron-beam radiation, the interaction of blanked chalcogenide films and nanostructured films containing chalcogenide glass and silver (Ag) source are studied. Raman spectroscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction are used for establishing the structural and compositional effects occurring under radiation. They have strong compositional dependence with the stoichiometric compositions being most stable showing less structural changes after radiation. These effects are associated with the availability …