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Full-Text Articles in Physics
Carrier Dynamics Of Terahertz Emission Based On Strained Sige/Si Single Quantum Well, K. M. Hung, J.-Y. Kuo, C. C. Hong, Greg Sun, R. A. Soref
Carrier Dynamics Of Terahertz Emission Based On Strained Sige/Si Single Quantum Well, K. M. Hung, J.-Y. Kuo, C. C. Hong, Greg Sun, R. A. Soref
Physics Faculty Publications
We report analysis of the carrier distribution during terahertz emission process with carrier–phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become “hot” carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a “second” emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.
Radiation Emission From Wrinkled Sige/Sige Nanostructure, A. I. Fedorchenko, H. H. Cheng, Greg Sun, R. A. Soref
Radiation Emission From Wrinkled Sige/Sige Nanostructure, A. I. Fedorchenko, H. H. Cheng, Greg Sun, R. A. Soref
Physics Faculty Publications
Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity in a manner analogous to synchrotron radiation. The radiated frequency of wrinkled SiGe/SiGe nanostructure was found to cover a wide spectrum with radiation power levels of the order of submilliwatts. Thus, this nanostructure can be used as a Si-based optical emitter and it will enable the integration of optoelectronic …