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Physics Faculty Publications

Series

2008

III-V semiconductors

Articles 1 - 2 of 2

Full-Text Articles in Physics

Electroluminescence Efficiency Enhancement Using Metal Nanoparticles, Jacob B. Khurgin, Greg Sun, R. A. Soref Jul 2008

Electroluminescence Efficiency Enhancement Using Metal Nanoparticles, Jacob B. Khurgin, Greg Sun, R. A. Soref

Physics Faculty Publications

We apply the “effective mode volume” theory to evaluate enhancement of the electroluminescence efficiency of semiconductor emitters placed in the vicinity of isolated metal nanoparticles and their arrays. Using the example of an InGaN/GaN quantum-well active region positioned in close proximity to Ag nanospheres, we show that while the enhancement due to isolated metal nanoparticles is large, only modest enhancement can be obtained with ordered array of those particles. We further conclude that random assembly of isolated particles holds an advantage over the ordered arrays for light emitting devices of finite area.


Atomic Size Mismatch Strain Induced Surface Reconstructions, Jessica E. Bickel, Normand A. Modine, Anton Van Der Ven, Joanna Mirecki Millunchick Feb 2008

Atomic Size Mismatch Strain Induced Surface Reconstructions, Jessica E. Bickel, Normand A. Modine, Anton Van Der Ven, Joanna Mirecki Millunchick

Physics Faculty Publications

The effects of lattice mismatch strain and atomic size mismatch strain on surface reconstructions are analyzed using density functional theory. These calculations demonstrate the importance of an explicit treatment of alloying when calculating the energies of alloyed surface reconstructions. Lattice mismatch strain has little impact on surface dimer ordering for the α2(2×4) reconstruction of GaAs alloyed with In. However, atomic size mismatch strain induces the surface In atoms to preferentially alternate position, which, in turn, induces an alternating configuration of the surface anion dimers. These results agree well with experimental data for α2(2×4) domains in InGaAs∕GaAs surfaces.