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Full-Text Articles in Physics
Electron-Irradiation-Induced Deep Level In N-Type Gan, Z-Q. Fang, Joseph W. Hemsky, David C. Look, M. P. Mack
Electron-Irradiation-Induced Deep Level In N-Type Gan, Z-Q. Fang, Joseph W. Hemsky, David C. Look, M. P. Mack
Physics Faculty Publications
Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 eV. The production rate is approximately 0.2 cm−1, lower than the rate of 1 cm−1 found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time. ©1998 American Institute of Physics.