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Full-Text Articles in Physics
Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove
Shifted X-Ray Photoelectron Peak In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, J. T. Grant, J. R. Sizelove
Physics Faculty Publications
X‐ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200 °C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi‐level‐controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.
Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look
Photoquenching Of Hopping Conduction In Low-Temperature-Grown Molecular-Beam-Epitaxial Gaas, Z-Q. Fang, David C. Look
Physics Faculty Publications
We have observed IR photoquenching of the hopping conduction in GaAs samples grown by molecular beam epitaxy at the low temperature of 250 °C and annealed at temperatures from 300 to 600 °C. A key element in the success of this study is removal of the layers from their substrates. The hopping conduction recovers at about 140 K, with a thermal activation energy of about 0.3 eV.
Traps In Semi-Insulating Inp Studied By Thermally Stimulated Current Spectroscopy, Z. Q. Fang, David C. Look, J. H. Zhao
Traps In Semi-Insulating Inp Studied By Thermally Stimulated Current Spectroscopy, Z. Q. Fang, David C. Look, J. H. Zhao
Physics Faculty Publications
Traps in Fe‐doped semi‐insulating InP samples have been studied by thermally stimulated current spectroscopy with IR (hν≤1.12 eV) excitation at 81 K. The possible involvement of native defects in determining the compensation mechanisms is suggested based on the observation of other than the usual 0.64 eV Fe‐related activation energy for the dark current in one of the four samples supplied from different sources. A metastable behavior of traps in another sample was found and explained by a charge‐controlled defect reaction model. Three out of the six traps observed are suggested to be electron traps and one among the …
Defect Models In Electron-Irradiated N-Type Gaas, B. Ziebro, Joseph W. Hemsky, David C. Look
Defect Models In Electron-Irradiated N-Type Gaas, B. Ziebro, Joseph W. Hemsky, David C. Look
Physics Faculty Publications
1 MeV electron irradiation has been performed in degenerate, n‐type (n≂2×1017 cm-3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models, and are most consistent with the usual E1 (EC-0.045 eV) and E2 (EC-0.15 eV) levels being the (-/0) and (0/+) transitions of the As vacancy, respectively. Also, an acceptor well below EC-0.15 eV is produced at a much higher rate than that of E1 and E2.
Mechanisms For Gaas Surface Passivation By A Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove
Mechanisms For Gaas Surface Passivation By A Molecular-Beam Epitaxial Cap Layer Grown At 200-Degrees-C, David C. Look, D. C. Walters, C. E. Stutz, K. R. Evans, J. R. Sizelove
Physics Faculty Publications
A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n‐type conductive layer significantly reduces the free‐electron depletion from the latter. By analyzing electron transfer to surface, interface, and bulk acceptor states in the cap, as a function of cap thickness, we show that either (1) the usual EC−0.7 eV surface states are absent, (2) a dense donor near EC−0.4 eV exists or (3) a high donor interface charge (∼5×1012 cm−2) is present. Any of these conclusions constitutes an important new aspect of low‐temperature MBE GaAs.
Native Donors And Acceptors In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, D. C. Walters, M. Mier, C. E. Stutz, S. K. Brierley
Native Donors And Acceptors In Molecular-Beam Epitaxial Gaas Grown At 200 Degrees C, David C. Look, D. C. Walters, M. Mier, C. E. Stutz, S. K. Brierley
Physics Faculty Publications
Absorption measurements at 1.1 and 1.2 μm were used along with the known electron and hole photoionization cross sections for EL2 to determine deep donor (EL2‐like) and acceptor concentrations ND=9.9×1019 and NA=7.9×1018 cm−3, respectively, in a 2‐μm‐thick molecular‐beam epitaxial GaAs layer grown at 200 °C on a 2‐in.‐diam semi‐insulating wafer. Both lateral and depth uniformities of ND over the wafer were excellent as was also the case for the conductivity. Band conduction was negligible compared to hopping conduction at 296 K as evidenced by the lack of a measurable Hall coefficient.
Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look
Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look
Physics Faculty Publications
The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers …
Incorporation Of Silicon And Aluminum In Low-Temperature Molecular-Beam Epitaxial Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look, Joseph Hemsky
Incorporation Of Silicon And Aluminum In Low-Temperature Molecular-Beam Epitaxial Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look, Joseph Hemsky
Physics Faculty Publications
The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers …
Electron-Paramagnetic-Resonance Study Of Gaas Grown By Low-Temperature Molecular-Beam Epitaxy, H. J. Vonbardeleben, M. O. Manasreh, David C. Look, K. R. Evans, C. E. Stutz
Electron-Paramagnetic-Resonance Study Of Gaas Grown By Low-Temperature Molecular-Beam Epitaxy, H. J. Vonbardeleben, M. O. Manasreh, David C. Look, K. R. Evans, C. E. Stutz
Physics Faculty Publications
Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The thermal-equilibrium concentration of 3×1018 cm−3 ionized AsGa defects directly shows the additional presence of unidentified acceptor defects in the same concentration range. The defect distribution in GaAs grown by LTMBE is unstable under thermal annealing at T≳500 °C.
Densities And Vibrational Distribution Of H3+ In The Jovian Auroral Ionosphere, Y. H. Kim, Jane L. Fox, H. S. Porter
Densities And Vibrational Distribution Of H3+ In The Jovian Auroral Ionosphere, Y. H. Kim, Jane L. Fox, H. S. Porter
Physics Faculty Publications
Observations of the H3+ infrared emission at 2 and 4 μm have suggested that H3+ is in local thermodynamic equilibrium (LTE) in the region of the Jovian ionosphere from which the emissions originate. We have tested this assumption by calculating the vibrational distribution of H3+ over the altitude range of 350 to 1500 km above the methane cloud tops (1 to 4 × 10−3 μbar). We have constructed a model of the Jovian auroral ionosphere in which the neutral temperatures are enhanced over those of the mid-latitude ionosphere, as suggested by observations and …
Alloy Scattering In P-Type Alxga1-Xas, David C. Look, D. K. Lorance, J. R. Sizelove, C. E. Stutz, K. R. Evans, D. W. Whitson
Alloy Scattering In P-Type Alxga1-Xas, David C. Look, D. K. Lorance, J. R. Sizelove, C. E. Stutz, K. R. Evans, D. W. Whitson
Physics Faculty Publications
The hole mobility of Be‐doped ( ~ 2 × 1017 cm-3) AlxGa1-xAs, for x=0–1, is analyzed both theoretically and experimentally. Alloy scattering is very important, and in fact reduces the hole mobility from 150 to less than 90 cm2/V s at x=0.5. The main parameter in the alloy scattering formulation, the alloy potential Eal, is found to be about 0.5 eV for p‐type AlxGa1-xAs.