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A Study Of Anisotropic Chemical Etching On Crystalline Silicon, Gregory D. Erickson
A Study Of Anisotropic Chemical Etching On Crystalline Silicon, Gregory D. Erickson
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It is known that chemical reaction rates can be different on different crystal planes. KOH is a common etchant for Si and the reaction rate on {100} planes is much faster than the {111} planes. Therefore a square etch window on a (100) Si surface can become an inverse pyramid at some point after KOH etch. However, it is not clear how a 3-‐dimensional cubic crystal will evolve by KOH etching. In this study we use a dicing saw to create arrays of rectangular crystal pillars of different dimensions in two different orientations followed by 6M KOH etch at 50º …