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Full-Text Articles in Physics
3d Transition Metal Doping Of Semiconducting Boron Carbides, Peter A. Dowben, Orhan Kizilkaya, Jing Liu, B. Montag, K. Nelson, Ildar F. Sabiryanov, Jennifer I. Brand
3d Transition Metal Doping Of Semiconducting Boron Carbides, Peter A. Dowben, Orhan Kizilkaya, Jing Liu, B. Montag, K. Nelson, Ildar F. Sabiryanov, Jennifer I. Brand
Peter Dowben Publications
The introduction metallocenes, in particular ferrocene (Fe(η5-C5H5)2), cobaltocene (Co(η5-C5H5)2), and nickelocene (Ni(η5-C5H5)2), together with the carborane source molecule closo-1,2-dicarbadodecaborane, during plasma enhanced chemical vapor deposition, will result in the transition metal doping of semiconducting boron carbides. Here we report using ferrocene to introduce Fe dop¬ants, and a semiconducting boron-carbide homojunction has been fabricated. The diode characteristics are very similar to those fabricated with Co and Ni doping.
A Handheld Neutron-Detection Sensor System Utilizing A New Class Of Boron Carbide Diode, Kevin Osberg, Nathan Schemm, M. Susan Hallbeck, Sina Balkir, Peter A. Dowben, Jennifer I. Brand, Michael W. Hoffman
A Handheld Neutron-Detection Sensor System Utilizing A New Class Of Boron Carbide Diode, Kevin Osberg, Nathan Schemm, M. Susan Hallbeck, Sina Balkir, Peter A. Dowben, Jennifer I. Brand, Michael W. Hoffman
Peter Dowben Publications
A handheld neutron-detection sensor application is described in this paper. The sensor system utilizes a new class of boron carbide diode that interacts with incoming neutrons. To interface with the boron carbide diode, an integrated front end is designed in a 1.5-μm standard CMOS technology. With the diode and front-end microchip, a handheld neutron-detection system was realized with an embedded microcontroller for real-time processing. The handheld detector operation was then tested with a plutonium–beryllium neutron source. Test and measurement results confirm the validity of the approach and the functionality of the design.
The Adsorption Of Orthocarborane On Cobalt, L. Bernard, A. N. Caruso, Bo Xu, Bernard Doudin, Peter A. Dowben
The Adsorption Of Orthocarborane On Cobalt, L. Bernard, A. N. Caruso, Bo Xu, Bernard Doudin, Peter A. Dowben
Peter Dowben Publications
The adsorption of closo-1,2 dicarbadodecaborane (orthocarborane) on evaporated cobalt thin films has been investigated by combined photoemission and inverse photoemission studies. The adsorption of these icosahedral molecules does not strongly perturb the electronic structure of the underlying cobalt. As was previously observed with adsorption on Cu(100), electron induced decomposition of adsorbed orthocarborane decreases the HOMO–LUMO gap. The X-ray photoemission spectra before and after orthocarborane adsorption confirm that the interface with cobalt is abrupt. These results suggest that chemical vapor deposition, via the decomposition of orthocarborane, may be an effective method for fabricating dielectric barrier layers, without utilizing oxides. This …
Sputter Deposition Of High Resistivity Boron Carbide, Ahmad A. Ahmad, Natale J. Ianno, Seong-Don Hwang, Peter A. Dowben
Sputter Deposition Of High Resistivity Boron Carbide, Ahmad A. Ahmad, Natale J. Ianno, Seong-Don Hwang, Peter A. Dowben
Peter Dowben Publications
We have succeeded in the rf magnetron sputter deposition of high resistivity boron carbide (B1−xCx). This has been accomplished by the sputter depositing the boron carbide from a methane saturated boron carbide target. We show that the composition and optical band gap of the sputter deposited material are functions of the applied rf power. Furthermore, boron carbide/silicon heterojunction diodes fabricated via sputtering compare favorably with those fabricated from borane cage molecule sources using plasma enhanced chemical vapor deposition (PECVD).