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Full-Text Articles in Physics

Electron Energy Dependent Charging Effects Of Multilayered Dielectric Materials, Gregory Wilson, Jr Dennison, Amberly Evans, Justin Dekany Aug 2013

Electron Energy Dependent Charging Effects Of Multilayered Dielectric Materials, Gregory Wilson, Jr Dennison, Amberly Evans, Justin Dekany

Gregory Wilson

Measurements of the charge distribution in electron-bombarded, thin-film, multilayer dielectric samples showed that charging of multilayered materials evolves with time and is highly dependent on incident energy; this is driven by electron penetration depth, electron emission and material conductivity. Based on the net surface potential’s dependence on beam current, electron range, electron emission and conductivity, measurements of the surface potential, displacement current and beam energy allow the charge distribution to be inferred. To take these measurements, a thin-film disordered SiO2 structure with a conductive middle layer was charged using 200 eV and 5 keV electron beams with regular 15 s …


Electron Induced Charging And Arcing Of Multilayered Dielectric Materials, Jr Dennison, Gregory Wilson, Amberly Evans, Justin Dekany Aug 2013

Electron Induced Charging And Arcing Of Multilayered Dielectric Materials, Jr Dennison, Gregory Wilson, Amberly Evans, Justin Dekany

Gregory Wilson

Measurements of the charge distribution in electron-bombarded, thin-film, multilayered dielectric samples showed that charging of multilayered materials evolves with time and is highly dependent on incident energy; this is driven by electron penetration depth, electron emission and material conductivity. Based on the net surface potential’s dependence on beam current, electron range, electron emission and conductivity, measurements of the surface potential, displacement current and beam energy allow the charge distribution to be inferred. To take these measurements, a thin-film disordered SiO2 structure with a conductive middle layer was charged using 200 eV and 5 keV electron beams with regular 15 s …


Electron Beam Induced Luminescence Of Sio2 Optical Coatings, Jr Dennison, Amberly Evans, Gregory Wilson, Justin Dekany, Charles W. Bowers, Robert Meloy Aug 2013

Electron Beam Induced Luminescence Of Sio2 Optical Coatings, Jr Dennison, Amberly Evans, Gregory Wilson, Justin Dekany, Charles W. Bowers, Robert Meloy

Gregory Wilson

Optical coatings of disordered thin film SiO2/SiOx dielectric samples on reflective metal substrates exhibited cathodoluminescence under electron beam irradiation. Measurements of the absolute radiance and emission spectra as functions of incident electron energy, flux and power over a range of sample temperatures are reported. Radiance reached a saturation plateau at high incident electron power. Well below saturation radiance scaled with deposited power, that is linearly with incident power for lower-energy non-penetrating electrons and decreasing with increasing energy for penetrating radiation. Four bands were observed in spectral measurements from 300 nm to 1000 nm. Changes in peak intensity and shifts in …


Approximation Of Range In Materials As A Function Of Incident Electron Energy, Gregory Wilson, Jr Dennison Aug 2013

Approximation Of Range In Materials As A Function Of Incident Electron Energy, Gregory Wilson, Jr Dennison

Gregory Wilson

A simple composite analytic expression has been developed to approximate the electron range in materials. The expression is applicable over more than six orders of magnitude in energy (<10 eV to >10 MeV) and range (10-9 m to 10-2 m), with uncertainty of ≤20% for most conducting, semiconducting and insulating materials. This is accomplished by fitting data from two standard NIST databases [ESTAR for the higher energy range and the electron IMFP (inelastic mean free path) for the lower energies]. In turn, these data have been fit with well-established semi-empirical models for range and IMFP that are related to standard materials properties …


Power And Charge Deposition In Multilayer Dielectrics From Monoenergetic Electron Bombardment, Gregory Wilson, Amberly Evans, Justin Dekany, Jr Dennison Aug 2013

Power And Charge Deposition In Multilayer Dielectrics From Monoenergetic Electron Bombardment, Gregory Wilson, Amberly Evans, Justin Dekany, Jr Dennison

Gregory Wilson

Power and charge deposition in multilayer dielectrics from electron bombardment is dependent upon the flux and electron range of the electron beam, where the range,--a lso known as the penetration depth—is dependent upon the incident beam energy. Using the Continuous Slow Down Approximation (CSDA), a composite analytical formula has been developed to relate the electron range to the dose rate and subsequently to the deposited power in each subsequent layer. Based on the constituent layer geometry and material , the deposited charge can also be inferred. To validate these models two separate experiments were conducted, one based on the net …


Ultrahigh Vacuum Cryostat System For Extended Low Temperature Space Environment Testing, Justin Dekany, Robert H. Johnson, Gregory Wilson, Amberly Evans, Jr Dennison Aug 2013

Ultrahigh Vacuum Cryostat System For Extended Low Temperature Space Environment Testing, Justin Dekany, Robert H. Johnson, Gregory Wilson, Amberly Evans, Jr Dennison

Gregory Wilson

The range of temperature measurements have been significantly extended for an existing space environment simulation test chamber used in the study of electron emission, sample charging and discharge, electrostatic discharge and arcing, electron transport, and luminescence of spacecraft materials. This was accomplished by incorporating a new cryostat system and sample mount, which maintained compatibility with an existing ultrahigh vacuum chamber (base pressure The new two-stage, closed-cycle helium cryostat has an extended sample temperature range from450 K, with long-term controlled stability of The new capabilities in this chamber have been employed to study the temperature dependence of materials properties critical to …


Temperature Dependence Of Sio2 Electron-Induced Cathodoluminescence, Amberly Evans, Gregory Wilson, Jr Dennison Aug 2013

Temperature Dependence Of Sio2 Electron-Induced Cathodoluminescence, Amberly Evans, Gregory Wilson, Jr Dennison

Gregory Wilson

No abstract provided.


Low Temperature Cathodoluminescence Of Space Observatory Materials, Amberly Evans, Gregory Wilson, Justin Dekany, Alec Sim, Jr Dennison Aug 2013

Low Temperature Cathodoluminescence Of Space Observatory Materials, Amberly Evans, Gregory Wilson, Justin Dekany, Alec Sim, Jr Dennison

Gregory Wilson

In recent charging studies, a discernable glow was detected emanating from sample surfaces undergoing electron beam bombardment that resulted from a luminescent effect termed cathodoluminescence. This suggests that some of the materials used as optical elements, structural components, and thermal control surfaces in the construction of space-based observatories might luminesce when exposed to sufficiently energetic charged particle fluxes from the space plasma environment. If these visible, infrared and ultraviolet emissions are intense enough, they can potentially produce optical contamination detrimental to the performance of the observatory optical elements and sensors, and act to limit their sensitivity and performance windows. As …


Extending The Band Model Of Disordered Sio2 Through Cathodoluminescence Studies, Amberly Evans, Gregory Wilson, Jr Dennison, Justin Dekany Aug 2013

Extending The Band Model Of Disordered Sio2 Through Cathodoluminescence Studies, Amberly Evans, Gregory Wilson, Jr Dennison, Justin Dekany

Gregory Wilson

Optical coatings of disordered thin film SiO2/SiOx dielectric samples on reflective metal substrates exhibited electron-induced luminescence (cathodoluminescence) under electron beam irradiation in an ultrahigh vacuum chamber at the USU facilities,. These experiments provided measurements of the absolute radiance and emission spectra as functions of incident electron energy, flux and power over a range of sample temperatures (300 K to 40 K). Early results from these experiments have led to a preliminary model of the band structure of highly disordered trapped states within the band gap of SiO2. We now extend this model to further describe the excitation of electrons from …


Low Temperature Cathodoluminescence In Disordered Sio2, Amberly Evans, Gregory Wilson, Jr Dennison Aug 2013

Low Temperature Cathodoluminescence In Disordered Sio2, Amberly Evans, Gregory Wilson, Jr Dennison

Gregory Wilson

Disordered SiO2 is commonly used for optical instrumentation and coatings. In space telescope applications, these materials can be exposed to low temperature (particularly for IR telescopes) and simultaneous electron fluxes from the space plasma environment. During recent charging tests of this dielectric material, a discernable glow was detected emanating from the surface of the SiO2, indicating that the incident electron beam induced a luminescent effect, termed cathodoluminescence. As the sample cooled from 300 K to 120 K, a change in the intensity and energy spectrum of the glow was observed between 250 nm and 1700 nm, demonstrating that the SiO2 …


Charging Effects Of Multilayered Dielectric Spacecraft Materials: Surface Voltage, Discharge And Arcing, Gregory Wilson, Amberly Evans, Justin Dekany, Jr Dennison Aug 2013

Charging Effects Of Multilayered Dielectric Spacecraft Materials: Surface Voltage, Discharge And Arcing, Gregory Wilson, Amberly Evans, Justin Dekany, Jr Dennison

Gregory Wilson

Charging of thin-film, multilayer dielectric materials subject to electron bombardment was found to evolve with time. The charging behavior was also highly dependent on the incident energy of the monoenergetic electron beams; this is driven by energy dependant processes including the electron penetration depth, electron emission, and material conductivity. The electron penetration depth is the average range to which incident electrons at a given incident energy penetrate into the material, thus defining the mean depth of an embedded charge layer. The secondary electron yield is the ratio of electrons emitted from the surface to the number of incident electrons; this …