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Full-Text Articles in Physics
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Temperature-Dependent Photoluminescence Of Ge/Si And Ge 1-Ysn Y/Si, Indicating Possible Indirect-To-Direct Bandgap Transition At Lower Sn Content, Mee-Yi Ryu, Thomas R. Harris, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis
Faculty Publications
Temperature (T)-dependent photoluminescence (PL) has been investigated for both p-Ge and n-Ge1-ySny films grown on Si substrates. For the p-Ge, strong direct bandgap (ED) along with weak indirect bandgap related (EID) PL at low temperatures (LTs) and strong ED PL at room temperature (RT) were observed. In contrast, for the n-Ge1-ySny, very strong dominant EID PL at LT and strong ED PL were observed at RT. This T-dependent PL study indicates that the indirect-to-direct bandgap transitions of Ge1-ySn …
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Complementary Metal-Oxide Semiconductor-Compatible Detector Materials With Enhanced 1550 Nm Responsivity Via Sn-Doping Of Ge/Si(100), Richard T. Beeler, Jay Mathews, Mee-Yi Ryu, Yung-Kee Yeo, Jose Menendez, John Kouvetakis
Faculty Publications
Previously developed methods used to grow Ge1−ySny alloys on Si are extended to Sn concentrations in the 1019−1020 cm−3 range. These concentrations are shown to be sufficient to engineer large increases in the responsivity of detectors operating at 1550 nm. The dopant levels of Sn are incorporated at temperatures in the 370–390 °C range, yielding atomically smooth layers devoid of threading defects at high growth rates of 15–30 nm/min. These conditions are far more compatible with complementary metal-oxide semiconductor processing than the high growth and processing temperatures required to achieve the same …
Manufacturing Of Atomically Sharp Silicon Tips And Their Use As Photocathodes, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena
Manufacturing Of Atomically Sharp Silicon Tips And Their Use As Photocathodes, W. I. Karian, Larry V. Knight, David D. Allred, A. Reyes-Mena
Faculty Publications
The discovery and understanding of the photoelectric effect led to the study of photoemissive materials fall into two major categories: classical photoemitters and negative-electron-affinity (NEA) materials. Classical photoemitters usually involve an alkali metal, a group-V element such as phosphorus, silver, and/or oxygen. An example is the Ag-O-Cs (S1) photoemitter. NEA photocathodes consist of a photoconductive single crystal semiconductor covered with a thin layer of cesium and oxygen. This layer lowers the work function of the photocathode. A dipole layer is formed at the surface, and band bending occurs. This lowers the effective work function. An example is the GaAs(CsO) photocathode …