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Faculty Publications

Semiconductor and Optical Materials

Semiconductor growth

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Full-Text Articles in Physics

Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton Nov 2022

Transition-Metal Ions In Β-Ga2O3 Crystals: Identification Of Ni Acceptors, Timothy D. Gustafson, Nancy C. Giles, Brian C. Holloway, J. Jesenovec, B. L. Dutton, M. D. Mccluskey, Larry E. Halliburton

Faculty Publications

Excerpt: Transition-metal ions (Ni, Cu, and Zn) in β-Ga2O3 crystals form deep acceptor levels in the lower half of the bandgap. In the present study, we characterize the Ni acceptors in a Czochralski-grown crystal and find that their (0/−) level is approximately 1.40 eV above the maximum of the valence band.


Experimental Determination Of The (0/−) Level For Mg Acceptors In Β-Ga2O3 Crystals, Christopher A. Lenyk, Trevor A . Gustafson, Sergey A. Basun, Larry E. Halliburton, Nancy C. Giles Apr 2020

Experimental Determination Of The (0/−) Level For Mg Acceptors In Β-Ga2O3 Crystals, Christopher A. Lenyk, Trevor A . Gustafson, Sergey A. Basun, Larry E. Halliburton, Nancy C. Giles

Faculty Publications

Electron paramagnetic resonance (EPR) is used to experimentally determine the (0/−) level of the Mg acceptor in an Mg-doped β-Ga2O3 crystal. Our results place this level 0.65 eV (±0.05 eV) above the valence band, a position closer to the valence band than the predictions of several recent computational studies. The crystal used in this investigation was grown by the Czochralski method and contains large concentrations of Mg acceptors and Ir donors, as well as a small concentration of Fe ions and an even smaller concentration of Cr ions. Below room temperature, illumination with 325 nm laser light …