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Full-Text Articles in Physics
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Effect Of Fabrication Parameters On The Ferroelectricity Of Hafnium Zirconium Oxide Films: A Statistical Study, Guillermo A. Salcedo, Ahmad E. Islam, Elizabeth Reichley, Michael Dietz, Christine M. Schubert Kabban, Kevin D. Leedy, Tyson C. Back, Weison Wang, Andrew Green, Timothy S. Wolfe, James M. Sattler
Faculty Publications
Ferroelectricity in hafnium zirconium oxide (Hf1−xZrxO2) and the factors that impact it have been a popular research topic since its discovery in 2011. Although the general trends are known, the interactions between fabrication parameters and their effect on the ferroelectricity of Hf1−xZrxO2 require further investigation. In this paper, we present a statistical study and a model that relates Zr concentration (x), film thickness (tf), and annealing temperature (Ta) with the remanent polarization (Pr) in tungsten (W)-capped Hf1−xZrxO2. …
Residual Optical Absorption From Native Defects In Cdsip2 Crystals, Timothy D. Gustafson, Nancy C. Giles, Elizabeth M. Scherrer, Kevin T. Zawilski, Peter G. Schunemann, Kent L. Averett, Jonathan E. Slagle, Larry E. Halliburton
Residual Optical Absorption From Native Defects In Cdsip2 Crystals, Timothy D. Gustafson, Nancy C. Giles, Elizabeth M. Scherrer, Kevin T. Zawilski, Peter G. Schunemann, Kent L. Averett, Jonathan E. Slagle, Larry E. Halliburton
Faculty Publications
CdSiP2 crystals are used in optical parametric oscillators to produce tunable output in the mid-infrared. As expected, the performance of the OPOs is adversely affected by residual optical absorption from native defects that are unintentionally present in the crystals. Electron paramagnetic resonance (EPR) identifies these native defects. Singly ionized silicon vacancies (V-Si) are responsible for broad optical absorption bands peaking near 800, 1033, and 1907 nm. A fourth absorption band, peaking near 630 nm, does not involve silicon vacancies. Exposure to 1064 nm light when the temperature of the CdSiP2 crystal is near 80K converts …