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Direct Bandgap Cross-Over Point Of Ge1-YSnY Grown On Si Estimated Through Temperature-Dependent Photoluminescence Studies, Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Buguo Wang, C. L. Senaratne

Faculty Publications

Epitaxial Ge_1-ySn_y (y = 0%–7.5%) alloys grown on either Si or Ge-buffered Si substrates by chemical vapor deposition were studied as a function of Sn content using temperature-dependent photoluminescence (PL). PL emission peaks from both the direct bandgap (Γ-valley) and the indirect bandgap (L-valley) to the valence band (denoted by E_D and EID, respectively) were clearly observed at 125 and 175 K for most Ge_1-ySn_y samples studied. At 300 K, however, all of the samples exhibited dominant E_D emission with either very weak or no measureable E_ID emission. At 10 K, …