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Degenerate Parallel Conducting Layer And Conductivity Type Conversion Observed From P-Ge1 - YSnY (Y = 0.06%) Grown On N-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Degenerate Parallel Conducting Layer And Conductivity Type Conversion Observed From P-Ge1 - YSnY (Y = 0.06%) Grown On N-Si Substrate, Mee-Yi Ryu, Yung Kee Yeo, M. Ahoujja, Thomas R. Harris, Richard T. Beeler, John Kouvetakis
Faculty Publications
Electrical properties of p-Ge1−ySny (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1−ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1−ySny layer below 50 K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370 K for this sample. A two-layer conducting model was used …
Low-Loss Meta-Atom For Improved Resonance Response, Derrick Langley, Ronald Coutu Jr., Peter J. Collins
Low-Loss Meta-Atom For Improved Resonance Response, Derrick Langley, Ronald Coutu Jr., Peter J. Collins
Faculty Publications
Measurements of a meta-atom integrated with a low noise amplifier into the split-ring resonator are presented. A comparison is made between baseline meta-atoms and one integrated with a GaAs low noise amplifier. S-parameter measurements in a RF strip-line show the resonant frequency location. The resonance null is more prominent for the integrated meta-atom. Biasing the low noise amplifier from 0 to 7 VDC showed that the resonant null improved with biasing voltage. As the biasing voltage increases, the transmission null reduced from -11.82 to -23.21 dB for biases from 0 to 7 VDC at resonant frequency.