Physics Commons^™

Investigating The Influence Of Interface And Vacancy Defects On The Growth Of Silicon Quantum Dots In Sio2, John Phelan

Electronic Thesis and Dissertation Repository

The effects of interface and vacancy defects on silicon quantum dot (Si-QD) growth are investigated using measurements of Time Resolved Photoluminescence (TRPL), Photoluminescence (PL) Spectroscopy and Electron Paramagnetic Resonance (EPR). Thermally grown SiO₂ thin films (280nm) were irradiated with high energy (400keV – 1MeV) silicon ions in order to introduce defects into the Si-QD growth layer of SiO₂. A noticeable increase in PL emission intensity is seen with the highest energy pre-implanted sample over a single implant sample. TRPL results show increased radiative lifetimes for the lower energy (400keV) pre-implant while little or no difference is seen …

The Study Of Optoelectronics In Semiconductor And Metallic Nanoparticle Hybrid Systems, Daniel G. Schindel

Electronic Thesis and Dissertation Repository

This thesis examines optoelectronics of photonic crystals and photonic nanofibers, especially with quantum dots and metallic nanoparticles doped into them. The simulations produced focus on the quantum dots, which are presented in an ensemble of 3-level systems.

In order to consider a photonic nanofiber in isolation, a model was developed for the density of photonic states. We studied two profiles, a square cross-section and a circular cross-section. In addition, we consider two architectures, one where a photonic crystal surrounds a dielectric fiber, and one where the fiber is another photonic crystal. We found several photonic nanofibers with a single bound …