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Seebeck Coefficient Enhancement Of Ald Pbte/Pbse Nanolaminate Structures Deposited Inside Porous Silicon Templates, Xin Chen, Pengtao Lin, Kai Zhang, Helmut Baumgart, Brian Geist, Vladimir Kochergin

Electrical & Computer Engineering Faculty Publications

In this paper, lead chalcogenide based thermoelectric nanolaminate structures were fabricated by alternately depositing PbTe and PbSe ALD layers on regular planar silicon wafers and on microporous silicon templates. Lead bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C₁₁H₁₉O₂) ₂), plus (trimethylsilyl) telluride ((Me₃Si)₂Te) and (trimethylsilyl) selenide ((Me₃Si)₂Se) were used as the chemical ALD precursors for lead, tellurium and selenium, respectively. The Seebeck coefficient in horizontal direction (parallel direction to the surface) to the multiple layered PbTe/PbSe nanolaminate structures was measured by an MMR Seebeck system, and benchmarked against the Seebeck coefficient …