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Full-Text Articles in Physics
Deep Traps In Molecular-Beam-Epitaxial Gaas Grown At Low Temperatures, David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz
Deep Traps In Molecular-Beam-Epitaxial Gaas Grown At Low Temperatures, David C. Look, Z-Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz
Physics Faculty Publications
Deep‐level transient spectroscopy has been performed on Si‐doped GaAs layers grown by molecular‐beam epitaxy at substrate temperatures of 400–450 °C. The λ effect is taken into account and overlapping peaks are analyzed numerically. An 0.65 eV electron trap of concentration 2×1016 cm−3 is believed to be related to the AsGa‐associated 0.65 eV Hall‐effect center, and also to the trap EB4 found in electron‐irradiated GaAs.
Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look
Incorporation Of Si And Al In Low Temperature Mbe Gaas, M. O. Manasreh, K. R. Evans, C. E. Stutz, David C. Look
Physics Faculty Publications
The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers …
Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li
Semiconducting/Semi-Insulating Reversibility In Bulk Gaas, David C. Look, Phil W. Yu, W. M. Theis, W. Ford, G. Mathur, J. R. Sizelove, D. H. Lee, S. S. Li
Physics Faculty Publications
Bulk, liquid‐encapsulated Czochralski GaAs may be reversibly changed from semiconducting (ρ∼1 Ω cm) to semi‐insulating (ρ∼107 Ω cm) by slow or fast cooling, respectively, following a 5 h, 950 °C soak in an evacuated quartz ampoule. This effect has been studied by temperature‐dependent Hall‐effect, photoluminescence, infrared absorption, mass spectroscopy, and deep level transient spectroscopy measurements. Except for boron, the samples are very pure, with carbon and silicon concentrations less than 3×1014 cm−3. Donor and acceptor concentrations, on the other hand, are in the mid 1015 cm−3 range, which means that …