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Hall-Effect Measurements In Cd-Implanted Gaas, B. K. Shin, David C. Look, Y. S. Park, J. E. Ehret

Physics Faculty Publications

Cadmium ions were implanted in GaAs crystals at 135 keV to doses ranging from 10¹² to 10¹⁶ ion/cm² at room temperature. Sheet‐resistivity and Hall‐effect measurements were carried out as a function of temperature, 4.2–300°K, after annealings at 700, 800, or 900°C in an Ar ambient. The sample surfaces were protected with pyrolytically deposited Si₃N₄. Significant p‐type conduction was observed when samples with doses ≳10¹³cm⁻² were annealed at ≳700°C. For doses below 10¹⁴ cm⁻² nearly complete electrical activity was attained after an 800–900°C anneal. The Cd profiles were …