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Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam
Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam
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The advancement of semiconductor materials has played a crucial role in driving positive technological breakthroughs that impact humanity in numerous ways. The presence of defects significantly alters the physical properties of semiconductors, making their analysis essential in the fabrication of semiconductor devices. I presented a new method to quantify surface and near-surface defects in single crystal semiconductors. Epitaxially-grown silicon was measured by low energy electron diffraction (LEED) to obtain the surface Debye temperature (θD). The results showed the surface θD of bulk Si (001), 1.0 μm, and 0.6 μm Si on sapphire of 333 K, 299 K, …