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Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov
Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov
Theses and Dissertations
This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BLC was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BLC and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BLC …
Cafm Studies Of Epitaxial Lateral Overgrowth Gan Films, Vishal P. Kasliwal
Cafm Studies Of Epitaxial Lateral Overgrowth Gan Films, Vishal P. Kasliwal
Theses and Dissertations
This thesis uses the techniques of atomic force microscopy (AFM) and conductiveAFM (CAFM) to study defect sites on GaN films. In particular, these defect sites demonstrate current leakage under reverse-bias conditions that are detrimental to device fabrication. Two growth techniques that were used to improve this leakage behavior for samples in this study included: epitaxial lateral overgrowth (ELO) and nano-ELO using a Si3N4 film. Both techniques decrease defects such as threading dislocations by controlling the nucleation and growth behavior of the GaN films. The EL0 technique uses a patterned dielectric film to laterally grow micron-wide regions (referred to as 'wings') …
Raman Scattering In Gan And Zno, Shinobu Nagata
Raman Scattering In Gan And Zno, Shinobu Nagata
Theses and Dissertations
The Micro-Raman scattering technique has been used for the study of GaN and ZnO. Capabilities of the Raman technique and existing literature on Raman spectroscopy in GaN and ZnO are reviewed. About 50 GaN and ZnO samples with a wide range of properties are studied. From the analysis of positions of the E2H and A1(LO) phonon modes, biaxial stress and plasmon coupling of the Al(LO) mode are observed and compared to a bulk GaN sample. The stress-related shift rate for the AI(LO) mode in hexagonal GaN is established to be 2.7 ± 0.4 cm-1/GPa through series of GaN with low …