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Full-Text Articles in Physics
Surface Photovoltage Transients For P-Type Algan, Karen L. Phumisithikul
Surface Photovoltage Transients For P-Type Algan, Karen L. Phumisithikul
Theses and Dissertations
There is an understanding of surface photovoltage (SPV) behavior for GaN, yet little is known about the SPV behavior for AlGaN. In this work, a Kelvin probe was used to measure the SPV for p-type AlGaN. Very slow SPV transients were found in AlGaN, which could not be explained with a simple thermionic model. A possible explanation of this behavior is the segregation of impurities to the surface, which causes significant reduction of the depletion region width (down to 2 nm), with carrier tunneling and hopping becoming the dominant mechanisms responsible for the SPV transients. To verify this assumption, …
Stm Studies Of Oxygen Etching Of Silicon Surfaces, Mary L. Willis
Stm Studies Of Oxygen Etching Of Silicon Surfaces, Mary L. Willis
Theses and Dissertations
This study uses atomic force microscopy (AFM) to investigate the oxygen etching behavior of the following silicon surface orientations: (001), (111), (113), (5 5 12) and (112). Most etching was performed at sample temperatures between 650 °C and 800 °C, at pressures of 3.3×10-7 and 1.5×10-7 Torr, and at an exposure of 200 L. Surface orientation strongly influences the morphology resulting from extended etching. The surface orientations that are stable against etching and remain flat include Si(001), Si(111), and Si(113). Such surfaces also include island structures, which result from etching around oxide-induced pinning sites. The density of these islands increases …