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Mechanical Characterization Of Patterned Silver Columnar Nanorods With The Atomic Force Microscope., Sean Kenny
Mechanical Characterization Of Patterned Silver Columnar Nanorods With The Atomic Force Microscope., Sean Kenny
Theses and Dissertations
Patterned silver (Ag) columnar nanorods were prepared by the glancing angle physical vapor deposition method. The Ag columnar nanorods were grown on a Si (100) substrate patterned with posts in a square “lattice” of length 1 μm. An electron beam source was used as the evaporation method, creating the deposition flux which was oriented 85˚ from the substrate normal. A Dimension Icon with NanoScope V controller atomic force microscope was used to measure the spring constant in 10 nm increments along the long axis of five 670 nm long Ag nanorod specimens. The simple beam bending model was used to …
Afm And C-Afm Studies Of Gan Films, Katherine Cooper
Afm And C-Afm Studies Of Gan Films, Katherine Cooper
Theses and Dissertations
This thesis uses the techniques of atomic force microscope (AFM) and conductive AFM (C-AFM) to study the conduction properties of n-type GaN films. A total of 16 samples were examined and grouped according to their surface morphologies and conduction behaviors. The most common type of surface morpliology was that of Ga-rich samples having undulating "hillocks" with interspersed holes. Although most of the samples had this common morphology, their local conduction behaviors were not all similar. Local I-V spectra of the tip-sample Schottky contact could be grouped according to three major types: low leakage, high leakage, and "p-type". The highest quality …
Stm Studies Of Oxygen Etching Of Silicon Surfaces, Mary L. Willis
Stm Studies Of Oxygen Etching Of Silicon Surfaces, Mary L. Willis
Theses and Dissertations
This study uses atomic force microscopy (AFM) to investigate the oxygen etching behavior of the following silicon surface orientations: (001), (111), (113), (5 5 12) and (112). Most etching was performed at sample temperatures between 650 °C and 800 °C, at pressures of 3.3×10-7 and 1.5×10-7 Torr, and at an exposure of 200 L. Surface orientation strongly influences the morphology resulting from extended etching. The surface orientations that are stable against etching and remain flat include Si(001), Si(111), and Si(113). Such surfaces also include island structures, which result from etching around oxide-induced pinning sites. The density of these islands increases …