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Thermal Quenching Of Photoluminescence In Zno And Gan, Nahla Albarakati
Thermal Quenching Of Photoluminescence In Zno And Gan, Nahla Albarakati
Theses and Dissertations
Investigation of the thermal quenching of photoluminescence (PL) in semiconductors provides valuable information on identity and characteristics of point defects in these materials, which helps to better understand and improve the properties of semiconductor materials and devices. Abrupt and tunable thermal quenching (ATQ) of PL is a relatively new phenomenon with an unusual behavior of PL. This mechanism was able to explain what a traditional model failed to explain. Usually, in traditional model used to explain “normal” quenching, the slope of PL quenching in the Arrhenius plot determines the ionization energy of the defect causing the PL band. However, in …