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Two-Dimensional Electron Gases At The Surface Of Potassium Tantalate, Ben Pound Aug 2014

Two-Dimensional Electron Gases At The Surface Of Potassium Tantalate, Ben Pound

Browse All Undergraduate research

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The Role Of Bandgap In The Secondary Electron Emission Of Small Bandgap Semiconductors: Studies Of Graphitic Carbon, Neal E. Nickles May 2002

The Role Of Bandgap In The Secondary Electron Emission Of Small Bandgap Semiconductors: Studies Of Graphitic Carbon, Neal E. Nickles

All Graduate Theses and Dissertations, Spring 1920 to Summer 2023

The question of whether the small bandgaps of semiconductors play a significant role in their secondary electron emission properties is investigated by studying evaporated graphitic amorphous carbon, which has a roughly 0.5 eV bandgap, in comparison with microcrystalline graphite, which has zero bandgap. The graphitic amorphous carbon is found to have a 30% increase in its maximum secondary electron yield over that of two microcrystalline graphite samples with comparable secondary electron yields: highly oriented pyrolytic graphite and colloidal graphite. The potentially confounding influence of the vacuum level has been isolated through the measurement of the photoelectron onset energy of the …

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Ionization‐Enhanced Diffusion: Ion Implantation In Semiconductors, J Bourgoin, David Peak, J W. Corbett Jan 1973

Ionization‐Enhanced Diffusion: Ion Implantation In Semiconductors, J Bourgoin, David Peak, J W. Corbett

All Physics Faculty Publications

A model for the diffusion of implanted interstitials during implantation is introduced and shown to be able to account for the tails observed in ion profiles. It is argued that mechanisms of ionization‐enhanced diffusion can explain some of the anomalous diffusion mechanisms observed in semiconductors. Indications for the existence of such mechanisms in the field of ion implantation in semiconductors are discussed.