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Extending The Band Model Of Disordered Sio2 Through Cathodoluminescence Studies, Amberly Evans, Gregory Wilson, Jr Dennison, Justin Dekany
Extending The Band Model Of Disordered Sio2 Through Cathodoluminescence Studies, Amberly Evans, Gregory Wilson, Jr Dennison, Justin Dekany
Presentations
Optical coatings of disordered thin film SiO2/SiOx dielectric samples on reflective metal substrates exhibited electron-induced luminescence (cathodoluminescence) under electron beam irradiation in an ultrahigh vacuum chamber at the USU facilities,. These experiments provided measurements of the absolute radiance and emission spectra as functions of incident electron energy, flux and power over a range of sample temperatures (300 K to 40 K). Early results from these experiments have led to a preliminary model of the band structure of highly disordered trapped states within the band gap of SiO2. We now extend this model to further describe …
Low Temperature Cathodoluminescence In Disordered Sio2, Amberly Evans, Gregory Wilson, John R. Dennison
Low Temperature Cathodoluminescence In Disordered Sio2, Amberly Evans, Gregory Wilson, John R. Dennison
All Physics Faculty Presentations
Disordered SiO2 is commonly used for optical instrumentation and coatings. In space telescope applications, these materials can be exposed to low temperature (particularly for IR telescopes) and simultaneous electron fluxes from the space plasma environment. During recent charging tests of this dielectric material, a discernable glow was detected emanating from the surface of the SiO2, indicating that the incident electron beam induced a luminescent effect, termed cathodoluminescence. As the sample cooled from 300 K to 120 K, a change in the intensity and energy spectrum of the glow was observed between 250 nm and 1700 nm, demonstrating that the SiO2 …