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Electron Transport In Laterally Confined Phosphorus Δ-Layers In Silicon, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, T. -C. Shen
Electron Transport In Laterally Confined Phosphorus Δ-Layers In Silicon, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, T. -C. Shen
T. -C. Shen
Two-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic temperatures. Experimental data fit well with two-dimensional weak localization and interaction theory when the phase coherence length is shorter than the smaller dimension of the confinement. Below a transition temperature the wire conductance saturates.