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Full-Text Articles in Physics
Solar Neutrinos, Sno And Neutrino-Deuteron Reactions, Vladimir Gudkov, Kuniharu Kubodera
Solar Neutrinos, Sno And Neutrino-Deuteron Reactions, Vladimir Gudkov, Kuniharu Kubodera
Faculty Publications
The standard nuclear physics approach and effective field theory approach for calculations of neutrino–deuteron cross sections for the solar neutrino energies are considered. Their main features, the level of accuracy and problems to be addressed for further developments are discussed.
High-Field Measurements Of Electron Decoherence Time In Metallic Nanowires: Switching Off Magnetic Impurity Spins, P. Mohanty, Richard A. Webb
High-Field Measurements Of Electron Decoherence Time In Metallic Nanowires: Switching Off Magnetic Impurity Spins, P. Mohanty, Richard A. Webb
Faculty Publications
We report low-temperature measurements of electron decoherence time in a series of pure gold wires, 18 nm thick and 30 nm wide. At fields up to 15 T, large enough to polarize any concentration of magnetic impurity spins, conductance fluctuation measurements show almost no temperature dependence of the decoherence time below 300 mK, both in the correlation field for interference and the root-mean-square value of the fluctuations. Combined with previous low-field weak localization measurements on samples from similar material, our experiment suggests that the ubiquitous saturation of decoherence time in these samples is not due to any mechanism based on …
Focusing Of Spin Polarization In Semiconductors By Inhomogeneous Doping, Yuriy V. Pershin Dr, Vladimir Privman
Focusing Of Spin Polarization In Semiconductors By Inhomogeneous Doping, Yuriy V. Pershin Dr, Vladimir Privman
Faculty Publications
We study the evolution and distribution of nonequilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping levels is considered.We assume that inhomogeneous spin polarization is created locally and driven through the boundary by the electric field.We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin polarization loss is expected. …