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Applications Of The Negatively-Charged Silicon Vacancy Color Center In Diamond, Forrest A. Hubert
Applications Of The Negatively-Charged Silicon Vacancy Color Center In Diamond, Forrest A. Hubert
Optical Science and Engineering ETDs
The spatial resolution and fluorescence signal amplitude in stimulated emission depletion (STED) microscopy is limited by the photostability of available fluorophores. Here, we show that negatively-charged silicon vacancy (SiV) centers in diamond are promising fluorophores for STED microscopy, owing to their photostable, near-infrared emission and favorable photophysical properties. A home-built pulsed STED microscope was used to image shallow implanted SiV centers in bulk diamond at room temperature. We performed STED microscopy on isolated SiV centers and observed a lateral full-width-at-half-maximum spot size of 89 ± 2 nm, limited by the low available STED laser pulse energy (0.4 nJ). For a …