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University of Nevada, Las Vegas
Aluminum; Cadmium; Compound semiconductors; Copper; Gallium; Heterojunctions; Nitrides; Optoelectronics; Photoemission; Solar cells; Surface science; Thin films; X-ray emission
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Full-Text Articles in Physics
Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana
Chemical And Electronic Structure Of Surfaces And Interfaces In Compound Semiconductors, Sujitra Pookpanratana
UNLV Theses, Dissertations, Professional Papers, and Capstones
The interface formation between two different materials is important in applications for optoelectronic devices. Often, the success or performance of these devices is dependent on the formation of these heterojunctions. In this work, the surface and interfaces in such materials for optoelectronic devices are investigated by a suite of X-ray analytical techniques including X-ray photoelectron (XPS), X-ray excited Auger electron (XAES), and X-ray emission (XES) spectroscopies to provide novel insight.
For the group III-nitrides (e.g., AlxGa1-xN) used in many light emitting devices, a significant challenge exists to form an Ohmic contact. The electron affinities and band gaps of GaN and …