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Full-Text Articles in Physics
Voltage-Induced Switching With Magnetoresistance Signature In Magnetic Nano-Filaments, Andrei Sokolov, Renat F. Sabirianov, Ildar F. Sabiryanov, Bernard Doudin
Voltage-Induced Switching With Magnetoresistance Signature In Magnetic Nano-Filaments, Andrei Sokolov, Renat F. Sabirianov, Ildar F. Sabiryanov, Bernard Doudin
Physics Faculty Publications
Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal–insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.
Domain-Wall Magnetoresistance Of Co Nanowires, Renat F. Sabirianov, Ashok K. Solanki, J. D. Burton, Sitaram S. Jaswal, Evgeny Y. Tsymbal
Domain-Wall Magnetoresistance Of Co Nanowires, Renat F. Sabirianov, Ashok K. Solanki, J. D. Burton, Sitaram S. Jaswal, Evgeny Y. Tsymbal
Physics Faculty Publications
Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic, and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to 1.5 nm. We show that finite-size effects play an important role in these nanowires resulting in oscillatory behavior of electronic charge and the magnetization as a function of the wire thickness, and a nonmonotonic behavior of spin-dependent quantized conductance. We calculate the magnetoresistance (MR) of a domain wall (DW) modeled by a spin-spiral region of finite width sandwiched between two semi-infinite Co wire leads. We find that the DW …