Physics Commons^™

Spin-Dependent Electronic Transport In Noncollinear Antiferromagnetic Antiperovskites, Gautam Gurung

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Spin-dependent properties are the heart of spintronic devices. Spintronics exploits electron’s spin, in addition to charge, to process and store the information. Recently, antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM order parameter (the Néel vector) is exploited to control spin-dependent transport properties. Due to being robust against magnetic perturbations, producing no stray fields, and exhibiting ultrafast dynamics, antiferromagnets can serve as promising functional materials for spintronic applications.

Among antiferromagnets, high Néel temperature noncollinear antiperovskites ANMn₃ (A = Ga, Ni, Sn, and Pt) are interesting due to their magnetic group symmetry supporting non-trivial spin-dependent …

Manipulation Of Spin Crossover Phenomenon In An Fe (Ii) Molecular Complex And Application To Molecular Spintronics, Guanhua Hao

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Molecules with a large local magnetic moment have attracted considerable attention for application in spintronic devices. One candidate of a suitable device goes to the spin crossover molecule, where these 3d transition metal compounds are able to exhibit a robust spin state transition between distinct states. By proper design, the spintronic devices fabricated via spin crossover molecular thin films could achieve novel functionality while retaining flexibility and other traits based on its “organic” nature.

Controlling the spin state transition is a key factor of these possibilities. This thesis work investigates the manipulation of the spin state transition in [Fe{H …

Space-Charge Limited Conduction In Epitaxial Chromia Films Grown On Elemental And Oxide-Based Metallic Substrates, C.-P. Kwan, Mike Street, Ather Mahmood, Will Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, Uttam Singisetti, Christian Binek, J. P. Bird

Christian Binek Publications

We study temperature dependent (200 – 400 K) dielectric current leakage in high-quality, epitaxial chromia films, synthesized on various conductive substrates (Pd, Pt and V2O3). We find that trap-assisted space-charge limited conduction is the dominant source of electrical leakage in the films, and that the density and distribution of charge traps within them is strongly dependent upon the choice of the underlying substrate. Pd-based chromia is found to exhibit leakage consistent with the presence of deep, discrete traps, a characteristic that is related to the known properties of twinning defects in the material. The Pt- and V2O3-based films, in contrast, …

Dirac Nodal Line Metal For Topological Antiferromagnetic Spintronics, Ding-Fu Shao, Gautam Gurung, Shu-Hui Zhang, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Topological antiferromagnetic (AFM) spintronics is an emerging field of research, which exploits the N´eel vector to control the topological electronic states and the associated spin-dependent transport properties. A recently discovered N´eel spin-orbit torque has been proposed to electrically manipulate Dirac band crossings in antiferromagnets; however, a reliable AFM material to realize these properties in practice is missing. In this Letter, we predict that room-temperature AFM metal MnPd₂ allows the electrical control of the Dirac nodal line by the N´eel spin-orbit torque. Based on first-principles density functional theory calculations, we show that reorientation of the N´eel vector leads to switching …

Persistent Spin Texture Enforced By Symmetry, L. L. Tao, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Persistent spin texture (PST) is the property of some materials to maintain a uniform spin configuration in the momentum space. This property has been predicted to support an extraordinarily long spin lifetime of carriers promising for spintronics applications. Here, we predict that there exists a class of noncentrosymmetric bulk materials, where the PST is enforced by the nonsymmorphic space group symmetry of the crystal. Around certain high symmetry points in the Brillouin zone, the sublattice degrees of freedom impose a constraint on the effective spin–orbit field, which orientation remains independent of the momentum and thus maintains the PST. We illustrate …

Novel Half-Metallic And Spin-Gapless Heusler Compounds, Yunlong Jin

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

This thesis is devoted to experimental studies of Heusler compounds CoFeCrAl, CoFeCrX (X = Si, Ge) and Mn₂PtSn. These Heusler alloys present an interesting class of ferromagnetic materials for spintronic applications since they are predicted to be spin gapless semiconductors and have half-metallic properties with 100 % spin polarization at the Fermi level. In this thesis, the structural, magnetic, spin-polarization and electron- transport properties of the fabricated alloys were studied. CoFeCrAl thin films deposited on MgO exhibit nearly perfect epitaxy and a high degree of L2₁ Heusler order. All considered types of chemical disorder destroy the spin-gapless …

Interface States In Cofe2o4 Spin-Filter Tunnel Junctions, Pavel V. Lukashev, John D. Burton, Alexander Smogunov, Julian P. Velev, Evgeny Y. Tsymbal

Evgeny Tsymbal Publications

Spin-filter tunneling is a promising way to generate highly spin-polarized current, a key component for spintronics applications. In this paper we explore the tunneling conductance across the spin-filter material CoFe₂O₄ interfaced with Au electrodes, a geometry which provides nearly perfect lattice matching at the CoFe₂O₄/Au(001) interface. Using density functional theory calculations we demonstrate that interface states play a decisive role in controlling the transport spin polarization in this tunnel junction. For a realistic CoFe₂O₄ barrier thickness, we predict a tunneling spin polarization of about −60%. We show that this value …