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Defect-Assisted Tunneling Electroresistance In Ferroelectric Tunnel Junctions, Konstantin Klyukin, L. L. Tao, Evgeny Y. Tsymbal, Vitaly Alexandrov

Evgeny Tsymbal Publications

Recent experimental results have demonstrated ferroelectricity in thin films of SrTiO₃ induced by antisite Ti_Sr defects. This opens a possibility to use SrTiO₃ as a barrier layer in ferroelectric tunnel junctions (FTJs)—emerging electronic devices promising for applications in nanoelectronics. Here using density functional theory combined with quantum-transport calculations applied to a prototypical Pt/SrTiO₃/Pt FTJ, we demonstrate that the localized in-gap energy states produced by the antisite Ti_Sr defects are responsible for the enhanced electron tunneling conductance which can be controlled by ferroelectric polarization. Our tight-binding modeling, which takes into account multiple defects, shows that …