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University of Nebraska - Lincoln

2016

Atomic, Molecular and Optical Physics

Alexei Gruverman Publications

Articles 1 - 2 of 2

Full-Text Articles in Physics

Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman Jan 2016

Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman

Alexei Gruverman Publications

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr,Ti)O3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO3 films is …


Scaling Of Electroresistance Effect In Fully Integrated Ferroelectric Tunnel Junctions, Mohammad Abuwasib, Haidong Lu, Tao Li, Pratyush Buragohain, Hyungwoo Lee, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti Jan 2016

Scaling Of Electroresistance Effect In Fully Integrated Ferroelectric Tunnel Junctions, Mohammad Abuwasib, Haidong Lu, Tao Li, Pratyush Buragohain, Hyungwoo Lee, Chang-Beom Eom, Alexei Gruverman, Uttam Singisetti

Alexei Gruverman Publications

Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/BaTiO3/SrRuO3 ferroelectric tunnel junctions (FTJs) has been performed from micron to deep submicron dimensions. Pulsed measurements of the transient currents confirm the ferroelectric switching behavior of the FTJs, while the hysteresis loops measured by means of piezoresponse force microscopy verify the scalability of these structures. Fully integrated functional FTJ devices with the size of 300×300 nm2 exhibiting a tunneling electroresistance (TER) effect of the order of 2.7×104% have been fabricated and tested. Measured current density of 75 A/cm2 for the ON state …