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Full-Text Articles in Physics
Origin And Implications Of The Observed Rhombohedral Phase In Nominally Tetragonal Pb(Zr0.35Ti0.65)O3 Thin Films, Paul C. Mcintyre, Alexei Gruverman, Bryan C. Hendrix, Steven M. Bilodeau, Jeffrey F. Roeder
Origin And Implications Of The Observed Rhombohedral Phase In Nominally Tetragonal Pb(Zr0.35Ti0.65)O3 Thin Films, Paul C. Mcintyre, Alexei Gruverman, Bryan C. Hendrix, Steven M. Bilodeau, Jeffrey F. Roeder
Alexei Gruverman Publications
The structural and electrical properties of Pb(Zr0.35Ti0.65)O3 (PZT) thin films ranging in thickness from 700 to 4000 Å have been investigated. These (001)/(100)-textured films were grown by metalorganic chemical vapor deposition on (111)-textured Ir bottom electrodes. It was observed that, in the as-deposited state, the thinnest PZT films are rhombohedral even though bulk PZT of this composition should be tetragonal. Thicker films have a layered structure with tetragonal PZT at the surface and rhombohedral PZT at the bottom electrode interface. In this article we investigate the origin of this structure and its effect of the …
Mechanical Stress Effect On Imprint Behavior Of Integrated Ferroelectric Capacitors, Alexei Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, A. K. Tagantsev, J. S. Cross, M. Tsukada
Mechanical Stress Effect On Imprint Behavior Of Integrated Ferroelectric Capacitors, Alexei Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, A. K. Tagantsev, J. S. Cross, M. Tsukada
Alexei Gruverman Publications
Stress-induced changes in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O3 (PZT)-based capacitors have been studied using piezoresponse force microscopy. Visualization of polarization distribution and d33-loop measurements in individual 1x1.5-μm2 capacitors before and after stress application, generated by substrate bending, provided direct experimental evidence of stress-induced switching. Mechanical stress caused elastic switching in capacitors with the direction of the resulting polarization determined by the sign of the applied stress. In addition, stress application turned capacitors into a heavily imprinted state characterized by strongly shifted hysteresis loops and almost complete backswitching after application of the poling voltage. …
Spatial Inhomogeneity Of Imprint And Switching Behavior In Ferroelectric Capacitors, Alexei Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, J. S. Cross, M. Tsukada
Spatial Inhomogeneity Of Imprint And Switching Behavior In Ferroelectric Capacitors, Alexei Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, J. S. Cross, M. Tsukada
Alexei Gruverman Publications
Piezoresponse force microscopy has been used to perform nanoscale characterization of the spatial variations in the imprint and switching behavior of (111)-oriented Pb(Zr,Ti)O3-based capacitors on Pt electrodes. Mapping of polarization distribution in the poled capacitors as well as local d33–V loop measurements revealed a significant difference in imprint and switching behavior between the peripheral and inner parts of the capacitors. It has been found that the inner regions of the capacitors are negatively imprinted (with the preferential direction of the normal component of polarization upward) and tend to switch back after application of the positive poling …