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University of Nebraska - Lincoln

2001

Evgeny Tsymbal Publications

Articles 1 - 3 of 3

Full-Text Articles in Physics

Atomic And Electronic Structure Of Co/Srtio3/Co Tunnel Junctions, Ivan I. Oleinik, Evgeny Y. Tsymbal, David G. Pettifor Dec 2001

Atomic And Electronic Structure Of Co/Srtio3/Co Tunnel Junctions, Ivan I. Oleinik, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

First-principles density-functional calculations of the atomic and electronic structure of Co/SrTiO3 /Co (001) magnetic tunnel junctions (MTJ’s) are performed. Different interface terminations are considered and the most stable structure with the TiO2 termination is identified based on energetics of adhesion. The calculated electronic structure of the TiO2-terminated MTJ shows an exchange coupling between the interface Co and Ti atoms mediated by oxygen. This coupling induces a magnetic moment of 0.25 µB on the interface Ti atom, which is aligned antiparallel to the magnetic moment of the Co layer. We argue that this might cause an …

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Local Impurity-Assisted Conductance In Magnetic Tunnel Junctions, Evgeny Y. Tsymbal, David G. Pettifor Nov 2001

Local Impurity-Assisted Conductance In Magnetic Tunnel Junctions, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

Using a simple tight-binding model and the Kubo formula we have calculated the lateral distribution of the tunneling conductance across a magnetic tunnel junction probed by STM. We find that the presence of an isolated impurity within the barrier layer can cause a spike in the conductance distribution, which is in agreement with recent experiments. We show that the local tunneling magnetoresistance (TMR) is very sensitive to the electronic state of the impurity and to the lateral position of the tip. The latter dramatic variation in TMR could be detected by STM.

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Perspectives Of Giant Magnetoresistance, Evgeny Y. Tsymbal, David G. Pettifor Jan 2001

Perspectives Of Giant Magnetoresistance, Evgeny Y. Tsymbal, David G. Pettifor

Evgeny Tsymbal Publications

Giant magnetoresistance (GMR) is one of the most fascinating discoveries in thin-film magnetism, which combines both tremendous technological potential and deep fundamental physics. Within a decade of GMR being discovered in 1988 commercial devices based on this phenomenon, such as hard-disk read-heads, magnetic field sensors and magnetic memory chips, had become available in the market. These achievements would not have been possible without a detailed understanding of the physics of GMR, which requires a quantum-mechanical insight into the electronic spin-dependent transport in magnetic structures.

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