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Scaling Effect On Statistical Behavior Of Switching Parameters Of Ferroelectric Capacitors, Alexei Gruverman
Scaling Effect On Statistical Behavior Of Switching Parameters Of Ferroelectric Capacitors, Alexei Gruverman
Alexei Gruverman Publications
Scanning force microscopy (SFM) has been used to study nanoscale variations in switching parameters in layered perovskite films of SrBi2Ta2O9 and to investigate the effect of capacitor scaling on the standard deviation of the capacitors’ integral polarization signal. Ferroelectric poling and SFM piezoresponse imaging were performed in a number of regions on the film surface sized 2x2, 1x1, 0.5x0.5, and 0.3x0.3 μm2 with subsequent statistical analysis of the obtained data. It has been found that variations of the polarization signal can be approximated by the normal distribution function. The standard deviation increases with the …
Switching Properties Of Self-Assembled Ferroelectric Memory Cells, M. Alexe, Alexei Gruverman, C. Harnagea, N. D. Zakharov, A. Pignolet, D. Hesse, J. F. Scott
Switching Properties Of Self-Assembled Ferroelectric Memory Cells, M. Alexe, Alexei Gruverman, C. Harnagea, N. D. Zakharov, A. Pignolet, D. Hesse, J. F. Scott
Alexei Gruverman Publications
In this letter, we report on the switching properties of an ordered system of Bi4Ti3O12 ferroelectric memory cells of an average lateral size of 0.18 μm formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 μm size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode.