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Stress Evolution During The Growth Of Ultrathin Layers Of Iron And Iron Silicide On Si(111), D. Sander, Axel Enders, J. Kirschner
Stress Evolution During The Growth Of Ultrathin Layers Of Iron And Iron Silicide On Si(111), D. Sander, Axel Enders, J. Kirschner
Axel Enders Publications
Using a simple optical deflection technique, we measured continuously the mechanical stress during the growth of Fe films of 0.1–1.5 nm thickness on Si(111) in ultrahigh vacuum (UHV). The stress versus coverage dependence is discussed in view of the different growth modes during the various stages of Fe deposition. The deposition of up to 0.3 nm Fe induces a compressive stress of -1 N/m. We assign this stress to the formation of a reactive Fe–Si interface layer with a silicide-like structure. Subsequent Fe deposition at 300 K leads to a small tensile stress of 0.7 N/m, whereas the deposition at …
A Simple Technique To Measure Stress In Ultrathin Films During Growth, D. Sander, Axel Enders, J. Kirschner
A Simple Technique To Measure Stress In Ultrathin Films During Growth, D. Sander, Axel Enders, J. Kirschner
Axel Enders Publications
We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi, formation on Si(l11) is presented.