Open Access. Powered by Scholars. Published by Universities.®

Physics Commons

Open Access. Powered by Scholars. Published by Universities.®

University of Nebraska - Lincoln

Si-Hwang Liou Publications

Epitaxial integration

Articles 1 - 1 of 1

Full-Text Articles in Physics

Positive Exchange Bias In Epitaxial Permalloy/Mgo Integrated With Si (100), S. S. Rao, J. T. Prater, Fan Wu, S. Nori, D. Kumar, Lanping Yue, Sy_Hwang Liou, Jagdish Narayan Jan 2014

Positive Exchange Bias In Epitaxial Permalloy/Mgo Integrated With Si (100), S. S. Rao, J. T. Prater, Fan Wu, S. Nori, D. Kumar, Lanping Yue, Sy_Hwang Liou, Jagdish Narayan

Si-Hwang Liou Publications

In magnetic random access memory (MRAM) devices, soft magnetic thin film elements such as permalloy (Py) are used as unit cells of information. The epitaxial integration of these elements with the technologically important substrate Si (100) and a thorough understanding of their magnetic properties are critical for CMOS-based magnetic devices. We report on the epitaxial growth of Ni82.5Fe17.5 (permalloy, Py) on Si (100) using a TiN/MgO buffer layer. Initial stages of growth are characterized by the formation of discrete islands that gradually merge into a continuous film as deposition times are extended. Interestingly, we ...