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Full-Text Articles in Physics
Prediction Of A Mobile Two-Dimensional Electron Gas At The Lasco3/Basno3(001) Interface, Tula R. Paudel, Evgeny Y. Tsymbal
Prediction Of A Mobile Two-Dimensional Electron Gas At The Lasco3/Basno3(001) Interface, Tula R. Paudel, Evgeny Y. Tsymbal
Evgeny Tsymbal Publications
Two-dimensional electron gases (2DEG) at oxide interfaces, such as LaAlO3/SrTiO3 (001), have aroused significant interest due to their high carrier density (∼1014 cm−2) and strong lateral confinement (∼1 nm). However, these 2DEGs are normally hosted by the weakly dispersive and degenerate d bands (e.g., Ti-3d bands), which are strongly coupled to the lattice, causing mobility of such 2DEGs to be relatively low at room temperature (∼1 cm2/Vs). Here, we propose using oxide host materials with the conduction bands formed from s electrons to increase carrier mobility and soften its temperature dependence. Using …
Spin-Polarized Two-Dimensional Electron Gas At Gdtio3/Srtio3 Interfaces: Insight From First-Principles Calculations, J. Betancourt, Tula R. Paudel, Evgeny Y. Tsymbal, J. P. Velev
Spin-Polarized Two-Dimensional Electron Gas At Gdtio3/Srtio3 Interfaces: Insight From First-Principles Calculations, J. Betancourt, Tula R. Paudel, Evgeny Y. Tsymbal, J. P. Velev
Evgeny Tsymbal Publications
Two-dimensional electron gases (2DEGs) at oxide interfaces have been a topic of intensive research due to their high carrier mobility and strong confinement. Additionally, strong correlations in the oxide materials can give rise to new and interesting physics, such as magnetism and metal-insulator transitions at the interface. Using first-principles calculations based on density functional theory, we demonstrate the presence of a highly spin-polarized 2DEG at the interface between the Mott insulator GdTiO3 and a band insulator SrTiO3. The strong correlations in the dopant cause ferromagnetic alignment of the interface Ti atoms and result in a fully spin-polarized …
Polarization-Controlled Ohmic To Schottky Transition At A Metal/Ferroelectric Interface, Xiaohui Liu, Yong Wang, John D. Burton, Evgeny Y. Tsymbal
Polarization-Controlled Ohmic To Schottky Transition At A Metal/Ferroelectric Interface, Xiaohui Liu, Yong Wang, John D. Burton, Evgeny Y. Tsymbal
Evgeny Tsymbal Publications
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n-BTO). The coexistence of a ferroelectric phase and conductivity opens the door to new functionalities that may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling, we explore the effect that the switchable polarization of n-BTO has on the electronic properties of the SrRuO3/n-BTO (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associated bending of the n-BTO conduction band determines the transport regime across the interface. The …