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Effects Of B And C Doping On Tunneling Magnetoresistance In Cofe/Mgo Magnetic Tunnel Junctions, Andy Paul Chen, John D. Burton, Evgeny Y. Tsymbal, Yuan Ping Feng, Jingsheng Chen
Effects Of B And C Doping On Tunneling Magnetoresistance In Cofe/Mgo Magnetic Tunnel Junctions, Andy Paul Chen, John D. Burton, Evgeny Y. Tsymbal, Yuan Ping Feng, Jingsheng Chen
Evgeny Tsymbal Publications
Using density-functional theory calculations, we investigate the dominant defects formed by boron (B) and carbon (C) impurities in a CoFe/MgO/CoFe magnetic tunnel junction (MTJ) and their influence on conductivity and tunneling magnetoresistance (TMR). We find that, in the O-poor conditions relevant to experiment, B forms the substitutional defect BCo and C forms the interstitial site Ci at the CoFe/MgO interface. The C-doped MTJ is predicted to have a significantly higher TMR than the B-doped MTJ. This is due to interface state densities associated with the majority spin Δ1-symmetry bands being more heavily suppressed by the B …