Physics Commons^™

Towards A Strong Spin–Orbit Coupling Magnetoelectric Transistor, Peter Dowben, Christian Binek, Kai Zhang, Lu Wang, Wai-Ning Mei, Jonathan P. Bird, Uttam Singisetti, Xia Hong, Kang L. Wang, Dmitri Nikonov

Peter Dowben Publications

Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin–orbit coupling (SOC). The emphasis of the ME spin field-effect transistors (ME spin FET) is on an antiferromagnet spin–orbit read logic device and a ME spin-FET multiplexer. Both spin-FET schemes exploit the strong SOC in the semiconducting channel materials but remain dependent on the voltage-induced switching of an ME, so that the switching time is limited only by the switching dynamics of the ME. The induced exchange field spin …