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Full-Text Articles in Physics
Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert
Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
A set of monoclinic β-(AlxGa1–x)2O3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented β-Ga2O3 substrates for compositions x ≤ 0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5 eV–9.0 eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for β-Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in …
Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva
Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva
Department of Electrical and Computer Engineering: Faculty Publications
In this Rapid Communication, we present the order of the phonon modes and the appearance of the reststrahlen bands for monoclinic symmetry materials with polar lattice vibrations. Phonon modes occur in associated pairs of transverse and longitudinal optical modes, and pairs either belong to inner or outer phonon modes. Inner modes are nested within outer modes. Outer modes cause polarization-dependent reststrahlen bands. Inner modes cause polarization-independent reststrahlen bands. The directional limiting frequencies within the Born-Huang approach are bound to within outer mode frequency regions not occupied by inner mode pairs. Hence, an unusual phonon mode order can occur where both …
Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva
Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva
Department of Electrical and Computer Engineering: Faculty Publications
In this letter, we investigate a set of n-type single crystals of monoclinic symmetry β-Ga2O3 with different free electron concentration values by generalized far infrared and infrared spectroscopic ellipsometry. In excellent agreement with our previous model prediction, we find here by experiment that longitudinal-phonon-plasmon coupled modes are polarized either within the monoclinic plane or perpendicular to the monoclinic plane. As predicted, all modes change the amplitude and frequency with the free electron concentration. The most important observation is that all longitudinal-phonon-plasmon coupled modes polarized within the monoclinic plane continuously change their direction as a function of …
Elevated Temperature Dependence Of The Anisotropic Visible-To-Ultraviolet Dielectric Function Of Monoclinic Β-Ga2o3, Alyssa Mock, Jeremy Vanderslice, Rafal Korlacki, John A. Woollam, Mathias Schubert
Elevated Temperature Dependence Of The Anisotropic Visible-To-Ultraviolet Dielectric Function Of Monoclinic Β-Ga2o3, Alyssa Mock, Jeremy Vanderslice, Rafal Korlacki, John A. Woollam, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We report on the temperature dependence of the dielectric tensor elements of n-type conductive β-Ga2O3 from 22 °C to 550 °C in the spectral range of 1.5 eV–6.4 eV. We present the temperature dependence of the excitonic and band-to-band transition energy parameters using a previously described eigendielectric summation approach [A. Mock et al., Phys. Rev. B 96, 245205 (2017)]. We utilize a Bose-Einstein analysis of the temperature dependence of the observed transition energies and reveal electron coupling with average phonon temperature in excellent agreement with the average over all longitudinal phonon plasmon coupled modes reported previously [M. …
Anisotropy And Phonon Modes From Analysis Of The Dielectric Function Tensor And The Inverse Dielectric Function Tensor Of Monoclinic Yttrium Orthosilicate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Anisotropy And Phonon Modes From Analysis Of The Dielectric Function Tensor And The Inverse Dielectric Function Tensor Of Monoclinic Yttrium Orthosilicate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the frequency dependence of the four independent Cartesian tensor elements of the dielectric function for monoclinic symmetry Y2SiO5 using generalized spectroscopic ellipsometry from 40–1200 cm−1. Three different crystal cuts, each perpendicular to a principle axis, are investigated. We apply our recently described augmentation of lattice anharmonicity onto the eigendielectric displacement vector summation approach [A.Mock et al., Phys. Rev. B 95, 165202 (2017)], and we present and demonstrate the application of an eigendielectric displacement loss vector summation approach with anharmonic broadening. We obtain an excellent match between all measured and model-calculated dielectric …
Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock
Generalized Ellipsometry On Complex Nanostructures And Low-Symmetry Materials, Alyssa Mock
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with …
Band-To-Band Transitions, Selection Rules, Effective Mass, And Excitonic Contributions In Monoclinic Β-Ga2o3, Alyssa Mock, Rafal Korlacki, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, Mathias Schubert
Band-To-Band Transitions, Selection Rules, Effective Mass, And Excitonic Contributions In Monoclinic Β-Ga2o3, Alyssa Mock, Rafal Korlacki, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β-Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75–9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the …
Anisotropy, Phonon Modes, And Lattice Anharmonicity From Dielectric Function Tensor Analysis Of Monoclinic Cadmium Tungstate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Anisotropy, Phonon Modes, And Lattice Anharmonicity From Dielectric Function Tensor Analysis Of Monoclinic Cadmium Tungstate, Alyssa Mock, Rafal Korlacki, Sean Knight, Mathias Schubert
Department of Electrical and Computer Engineering: Faculty Publications
We determine the frequency dependence of four independent Cartesian tensor elements of the dielectric function for CdWO4 using generalized spectroscopic ellipsometry within mid-infrared and far-infrared spectral regions. Different single crystal cuts, (010) and (001), are investigated. From the spectral dependencies of the dielectric function tensor and its inverse we determine all long-wavelength active transverse and longitudinal optic phonon modes with Au and Bu symmetry as well as their eigenvectors within the monoclinic lattice. We thereby demonstrate that such information can be obtained completely without physical model line-shape analysis in materials with monoclinic symmetry. We then augment the …
Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki
Anisotropy, Phonon Modes, And Free Charge Carrier Parameters In Monoclinic Β-Gallium Oxide Single Crystals, Mathias Schubert, Rafal Korlacki, Sean Knight, Tino Hofmann, Stefan Schöche, Vanya Darakchieva, Erik Janzén, Bo Monemar, Daniela Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Yoshinao Kumagai, Ken Goto, Akito Kuramata, S. Yamakoshi, Masataka Higashiwaki
Department of Electrical and Computer Engineering: Faculty Publications
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β-Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2̅01), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β-Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic …