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Femtosecond-Laser-Induced Spin-Polarized Electron Emission From A Gaas Tip, Evan M. Brunkow, Eric R. Jones, Herman Batelaan, Timothy J. Gay
Femtosecond-Laser-Induced Spin-Polarized Electron Emission From A Gaas Tip, Evan M. Brunkow, Eric R. Jones, Herman Batelaan, Timothy J. Gay
Timothy J. Gay Publications
It is shown that focusing circularly polarized 800nm light pulses of duration 100 fs on the tips of p-GaAs crystalline shards having no negative electron affinity (NEA) activation results in electron emission that is both fast and spin-polarized. The 400 fs duration of the emission process was determined by pump/probe measurements. The three samples we investigated produced electron polarizations of 13.1(0.9)%, 13.3(0.7)%, and 10.4(0.2)%. Emission currents ranged between 50 pA and 3 nA with a sample bias of –100 V and an average laser power of 100 mW. The electron emission exhibited linear dichroism and was obtained under moderate vacuum …
Spin- And Angle-Resolved Photoemission Studies Of The Electronic Structure Of Si(110)“16×2” Surfaces, N. K. Lewis, Y. Lassailly, L. Martinelli, I. Vobornik, J. Fujii, C. Bigi, Evan M. Brunkow, Nathan B. Clayburn, Timothy J. Gay, W. R. Flavell, E. A. Seddon
Spin- And Angle-Resolved Photoemission Studies Of The Electronic Structure Of Si(110)“16×2” Surfaces, N. K. Lewis, Y. Lassailly, L. Martinelli, I. Vobornik, J. Fujii, C. Bigi, Evan M. Brunkow, Nathan B. Clayburn, Timothy J. Gay, W. R. Flavell, E. A. Seddon
Timothy J. Gay Publications
The electronic structure of Si(110)“16×2” double-domain, single-domain, and 1×1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77K and 300K. Angleresolved photoemission was conducted using horizontally and vertically polarized 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states (S1 to S4) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarizations. Three surface states (S1, S2, and S4), observed in the Si(110)“16×2” reconstruction, were assigned to Si …