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Full-Text Articles in Physics
Electron Tunneling In A Strained N-Type Si1−Xgex/Si/Si1−Xgex Double-Barrier Structure, K. M. Hung, T. H. Cheng, W. P. Huang, K. Y. Wang, H. H. Cheng, Greg Sun, R. A. Soref
Electron Tunneling In A Strained N-Type Si1−Xgex/Si/Si1−Xgex Double-Barrier Structure, K. M. Hung, T. H. Cheng, W. P. Huang, K. Y. Wang, H. H. Cheng, Greg Sun, R. A. Soref
Physics Faculty Publications
We report electrical measurements on an n-type Si1−xGex/Si/Si1−xGex double-barrier structure grown on a partially relaxed Si1−yGey buffer layer. Resonance tunneling of Δ4band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ4 band is lowest in energy at the electrode. Since the Δ4 band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ2 band electrons, this work presents an advantage over those …
Electroluminescence Efficiency Enhancement Using Metal Nanoparticles, Jacob B. Khurgin, Greg Sun, R. A. Soref
Electroluminescence Efficiency Enhancement Using Metal Nanoparticles, Jacob B. Khurgin, Greg Sun, R. A. Soref
Physics Faculty Publications
We apply the “effective mode volume” theory to evaluate enhancement of the electroluminescence efficiency of semiconductor emitters placed in the vicinity of isolated metal nanoparticles and their arrays. Using the example of an InGaN/GaN quantum-well active region positioned in close proximity to Ag nanospheres, we show that while the enhancement due to isolated metal nanoparticles is large, only modest enhancement can be obtained with ordered array of those particles. We further conclude that random assembly of isolated particles holds an advantage over the ordered arrays for light emitting devices of finite area.