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Full-Text Articles in Physics
The Progenitors Of The Compact Early-Type Galaxies At High Redshift, Christina C. Williams, Mauro Giavalisco, Paolo Cassata, Elena Tundo, Tommy Wiklind, Yicheng Guo, Bomee Lee, Guillermo Barro, Stijn Wuyts, Eric F. Bell, Christopher J. Conselice, Avishai Dekel, Sandra M. Faber, Henry C. Ferguson, Norman A. Grogin, Nimish Hathi, Kuang-Han Huang, Dalibor D. Kocevski, Anton M. Koekemoer, David C. Koo, Swara Ravindranath, Sarah Salimbeni
The Progenitors Of The Compact Early-Type Galaxies At High Redshift, Christina C. Williams, Mauro Giavalisco, Paolo Cassata, Elena Tundo, Tommy Wiklind, Yicheng Guo, Bomee Lee, Guillermo Barro, Stijn Wuyts, Eric F. Bell, Christopher J. Conselice, Avishai Dekel, Sandra M. Faber, Henry C. Ferguson, Norman A. Grogin, Nimish Hathi, Kuang-Han Huang, Dalibor D. Kocevski, Anton M. Koekemoer, David C. Koo, Swara Ravindranath, Sarah Salimbeni
Physics and Astronomy Faculty Publications
We use GOODS and CANDELS images to identify progenitors of massive (M > 1010 M ☉) compact early-type galaxies (ETGs) at z ~ 1.6. Because merging and accretion increase the size of the stellar component of galaxies, if the progenitors are among known star-forming galaxies, these must be compact themselves. We select candidate progenitors among compact Lyman-break galaxies at z ~ 3 on the basis of their mass, star-formation rate (SFR), and central stellar density, and we find that these account for a large fraction of, and possibly all, compact ETGs at z ~ 1.6. We find that …
Class Of Ferromagnetic Semiconductors, Larysa Shlyk, Sergiy A. Kryukov, Lance E. De Long, Barbara Schüpp-Niewa, Rainer Niewa
Class Of Ferromagnetic Semiconductors, Larysa Shlyk, Sergiy A. Kryukov, Lance E. De Long, Barbara Schüpp-Niewa, Rainer Niewa
Physics and Astronomy Faculty Patents
Single crystal and polycrystal oxoruthenates having the generalized compositions (Baz,Sr1−z)FexCoyRu6−(x+y)O11 (1≦(x+y)≦5; 0≦z≦1) and (Ba,Sr)M2±xRu4∓xO11 (M=Fe,Co) belong to a novel class of ferromagnetic semiconductors with applications in spin-based field effect transistors, spin-based light emitting diodes, and magnetic random access memories.