Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physics
Experimental Study Of Profiles Of Implanted Species Into Semiconductor Materials Using Secondary Ion Mass Spectrometry, Fatma Salman
Experimental Study Of Profiles Of Implanted Species Into Semiconductor Materials Using Secondary Ion Mass Spectrometry, Fatma Salman
Electronic Theses and Dissertations
The study of impurity diffusion in semiconductor hosts is an important field that has both fundamental appeal and practical applications. Ion implantation is a good technique to introduce impurities deep into the semiconductor substrates at relatively low temperature and is not limited by the solubility of the dopants in the host. However ion implantation creates defects and damages to the substrate. Annealing process was used to heal these damages and to activate the dopants. In this study, we introduced several species such as alkali metals (Li, Na, K), alkali earth metals (Be, Ca,), transition metals (Ti, V, Cr, Mn) and …
Influence Of Electron Trapping On Minority Carrier Transport Properties Of Wide Band Gap Semiconductors, Olena Tirpak
Influence Of Electron Trapping On Minority Carrier Transport Properties Of Wide Band Gap Semiconductors, Olena Tirpak
Electronic Theses and Dissertations
Minority carrier transport properties and the effects of electron irradiation/injection were studied in GaN and ZnO containing dopants known to form acceptor states deep within the materials' bandgap. Minority carrier diffusion length and lifetime changes were investigated using Electron Beam Induced Current (EBIC) method, cathodoluminescence spectroscopy, spectral photoresponse and persistent photoconductivity measurements. It is shown that electron irradiation by the beam of a scanning electron microscope results in a significant increase of minority carrier diffusion length. These findings are supported by the cathodoluminescence measurements that demonstrate the decay of near-band-edge intensity as a consequence of increasing carrier lifetime under continuous …