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Effective Annealing Of Zno Thin Films Grown By Electrochemical Deposition Technique, Cevdet Coşkun, Harun Güney, Emre Gür, Sebahatti̇n Tüzemen
Effective Annealing Of Zno Thin Films Grown By Electrochemical Deposition Technique, Cevdet Coşkun, Harun Güney, Emre Gür, Sebahatti̇n Tüzemen
Turkish Journal of Physics
Wide and direct band gap ZnO thin films have been grown on conductive indium-tin-oxide (ITO) substrates by electrochemical deposition (ECD) technique using different growth parameters. High quality films in terms of crystallographic and optical characteristics have been obtained under a cathodic potential of -0.9 V; a pH of 5.2, using 0.1 M Zn(NO_3)_2 solution. Oxygen gas flow through the solution increased the growth rate and the quality of samples. Subsequent heat treatments at various temperatures for 30 minutes under dry N_2 gas flow show that the most suitable annealing temperature is 300 °C for these electrochemically deposited thin films on …